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Control of Ferroelectric Properties of PbZrxTi1−xO3 Thin Film for Electron Emission Device Driven by Low Voltage
Published online by Cambridge University Press: 10 February 2011
Abstract
Epitaxial PbZr0.52TiO0.48O3/YBa2Cu3O7−x heterostructures on Nd:YAlO3 and MgO substrates were fabricated by KrF pulsed laser deposition. The coercive electric field of the PZT films increased with decrease of the film thickness from 1.2 μm to 0.04 μm, while the magnitude of spontaneous polarization was almost constant in this thickness range. It was found that the dependence of the film thickness d on the coercive electric field Ec was Ecæ d−2/3. This results from that the PZT/YBCO heterostructure has the one dimensional ferroelectric domain growth without non-ferroelectric phase. The polarization of AuIPZT/YBCO/(MgO or YAlO) capacitors can be changed by the applied voltage below 5 V.
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- Copyright © Materials Research Society 1999