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Control of Etching of LiNbO3, by Implant Damage Profile Tailoring

  • P. J. Brannon (a1), C. I. H. Ashby (a1) and G. W. Arnold (a1)

Abstract

Damage-profile tailoring using multi-energy ion implants can produce smooth side walls and deeper etched features with ion-bombardment-enhanced wet etching of LiNb03 than is possible with a single-energy implant. High ion fluences can produce buried microcracks which may contribute to propagation losses commonly observed in ion-implanted waveguides.

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1 Kawabe, M., Hirata, S., Masuda, K., and Namba, S., J. Vac. Sci. Technol. 15, 1098 (1978).
2 Kawabe, M., Hirata, S., and Namba, S., IEEE Trans. Circuits and Sys. CAS–26. 1109 (1979).
3 Gotz, G. and Karge, H., Nuci. Instrum. Methods 209/210. 1079 (1983).
4 Ziegler, J.F., Biersack, J. P., and Littmark, U., The Stopping and Range of Ions in Solids. Vol. 1, edited by Ziegler, J. F. (Pergamon Press, New York, 1985).
5 Naden, J. M. and Weiss, B. L., J. of Lightwave Tech. LT–3. 855 (1985).

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