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Contribution of Electronic Energy Deposition to the Atomic Cascade Damage in Nanocrystals

Published online by Cambridge University Press:  01 February 2011

Marie Backman ,
Flyura Djurabekova ,
Olli H Pakarinen ,
Kai Nordlund  and
Marcel Toulemonde
Marie Backman
Affiliation:
marie.backman@helsinki.fi, Institute of Physics and Department of Physics, University of Helsinki, Finland
Flyura Djurabekova
Affiliation:
flyura.djurabekova@helsinki.fi, Institute of Physics and Department of Physics, University of Helsinki, Finland
Olli H Pakarinen
Affiliation:
olli.pakarinen@helsinki.fi, Institute of Physics and Department of Physics, University of Helsinki, Finland
Kai Nordlund
Affiliation:
kai.nordlund@helsinki.fi, Institute of Physics and Department of Physics, University of Helsinki, Finland
Marcel Toulemonde
Affiliation:
toulemonde@ganil.fr, Centre Interdisciplinaire de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), Caen, France
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Abstract

Using Molecular Dynamics we study the role of electronic excitations in the radiation damage caused by an energetic ion in Ge nanocrystals embedded in amorphous SiO2. The electronic effects are included as heating along the ion path modeled by the thermal spike model. In an ion energy regime where the electronic stopping power is larger than the nuclear, we find that the electronic effects enhance the defect creation significantly. We conclude that the electronic excitations below the track production threshold due to an energetic ion cannot be disregarded as a source of radiation damage.

Keywords

ion-solid interactionsnanostructureGe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1264: Symposia Z/BB – Basic Actinide Science and Materials for Nuclear Applications , 2010 , 1264-BB02-07
Copyright
Copyright © Materials Research Society 2010

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