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A Continuous Heterogeneous Model for the Crystalline to Amorphous Transition in Ion Implanted Semiconductors : Relationship to the “Critical Damage Energy Density” Model

  • C. Vieu (a1), A. Claverie (a2) (a3), J. Faure (a4) and J. Beauvillain (a3)

Abstract

A method is presented for calculating amorphization doses of ion implanted semiconductors, based on a continuous heterogeneous description of damage accumulation. This new approach is compared to the classical “critical damage energy density” (CDED) model. For high dose implantations the equivalence of both descriptions is formally established. It is proposed that the main limitation of the CDED model lies in the linear additivity of damage rather than the homogeneous damage build-up.

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9. Vieu, C., Claverie, A., Faure, J. and Beauvillain, J., to be published.

A Continuous Heterogeneous Model for the Crystalline to Amorphous Transition in Ion Implanted Semiconductors : Relationship to the “Critical Damage Energy Density” Model

  • C. Vieu (a1), A. Claverie (a2) (a3), J. Faure (a4) and J. Beauvillain (a3)

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