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Contamination Monitoring Using Surface Photovoltage and Application to Process Line Control

  • Lubek Jastrzebski (a1), Jacek Lagowski (a1), Worth Henley (a1) and Piotr Edelman (a2)

Abstract

Surface photovoltage (SPV) measurements of lifetime and charge are used by the silicon industry for real-time, non-contact monitoring of alkalide and heavy metal contamination during IC processing. Information about contamination present at the surface or in the bulk of a silicon wafer is derived from their effects on measured electronic characterization. Identification and detection, with a sensitivity of ppq (107 cm'3), of Fe and Cr in the bulk of p-type silicon is possible via monitoring of their decomposition/pairing kinetics with boron. We will show the most important examples of the application of SPV to monitor critical IC processing steps. The allowable contamination thresholds in IC processing lines are a very strong function of technology and are different for various metals.

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1 Henley, W.B., et al. , Proc. 1993 IEEE Rel. Phys. Symp., Atlanta, GA, p. 22.
2 Henley, W.B., et al. , Proc. Mat. Res. Soc, San Francisco, CA, April 1992, Vol. 262, p. 993.
3 Huber, D., Proceed, of the Nat. Renewable Energy Lab 1992 Workshop, Breckenridge, CO, August 1992.
4 Oshawa, A., et al. , “Semicond. Silicon 1990,” Proceed. 6th Int. Symp. Si Mat. Science and Technology, p. 601, H. Huff, Electrochem. Soc. Proceed. Vol. 90-7 and Nikkei Microdevices (in Japanese), p. 54, May 1990.
5 Jastrzebski, L., et al. , “3rd Int. Symp. on Cleaning Technology,” Electrochem. Soc. Meet., October 1993, New Orleans, LA, in press.
6 Jastrzebski, L., et al. , Solid State Tech, 35, 27, December 1992.
7 Lagowski, J., et al. , Semicond. Science Tech. 7 A185 (1992).
8 Lagowski, J., et al. , Appl. Phys. Lett., 63(21), 2902 (1993).
9 Jastrzebski, L., et al. , J. Electrochem. Soc, 140(4), 1152 (1993).
10 Lagowski, J., et. al. “Defect Recognition Image Processing 5” Conf., September 1993, Spain, in press.
11 Zoth, G., et al. , J. Appl. Phys., 67, 6764 (1990).
12 Lagowski, J., et al. , Appl. Phys. Lett., 63(22), 3043 (1993).
13 Mishra, K., et al. , presented at Electrochem. Soc. Meet., Toronto, Ontario, October 1993.
14 Lagowski, J., unpublished.
15 Matsumoto, K., Katoh, H., Kohno, M., Jap. Appl. Phys. Soc. Meet., March 1994.
16 Semiconductor Diagnostics, Inc.'s specification for Optical Fe Activation Station option of SPV Tools.
17 Fujino, N., et al. , “Semicond. Silicon 1990,” Proceed. 6th Int. Symp. Si Mat. Science and Technology, p. 709, H. Huff, Electrochem. Soc. Proceed. Vol. 90–7.
18 Jastrzebski, L., Henley, W., Milic, O., Lagowski, J., Lowell, J., DeBusk, D., Persson, E., and Nauka, K., 1994 IES Proceed. Vol. 1, p. 316 (1994).

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