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Contamination Monitoring Using Surface Photovoltage and Application to Process Line Control

Published online by Cambridge University Press:  21 February 2011

Lubek Jastrzebski ,
Jacek Lagowski ,
Worth Henley  and
Piotr Edelman
Lubek Jastrzebski
Affiliation:
Center for Microelectronics Research at the University of South Florida, Tampa, FL 33620
Jacek Lagowski
Affiliation:
Center for Microelectronics Research at the University of South Florida, Tampa, FL 33620
Worth Henley
Affiliation:
Center for Microelectronics Research at the University of South Florida, Tampa, FL 33620
Piotr Edelman
Affiliation:
and “Semiconductor Diagnostics, Inc., Tampa, FL 33610.
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Abstract

Surface photovoltage (SPV) measurements of lifetime and charge are used by the silicon industry for real-time, non-contact monitoring of alkalide and heavy metal contamination during IC processing. Information about contamination present at the surface or in the bulk of a silicon wafer is derived from their effects on measured electronic characterization. Identification and detection, with a sensitivity of ppq (107 cm'3), of Fe and Cr in the bulk of p-type silicon is possible via monitoring of their decomposition/pairing kinetics with boron. We will show the most important examples of the application of SPV to monitor critical IC processing steps. The allowable contamination thresholds in IC processing lines are a very strong function of technology and are different for various metals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 405
Copyright
Copyright © Materials Research Society 1995

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