Skip to main content Accessibility help
×
Home

A Consistent Model for Disordering of GaAs/AlAs- Superiattices During Zinc Diffusion

  • H. Zimmermann (a1), T. Y. Tan (a1) and U. Goesele (a1)

Abstract

A model for the disordering of GaAs/AlAs-superlattices during zinc diffusion, which is consistent with recently established models for gallium self-diffusion and zinc diffusion in GaAs, is presented. Four coupled partial differential equations resulting from the model are solved numerically. In accordance with measured data in the literature, no disordering without zinc can result for temperatures around 600°C. Zinc diffusion, however, produces a large amount of gallium self-interstitials, which leads to a complete disordering of superlattices with a period thickness of 32 nm to a depth of about 0.8 μm within one hour. The used values for the diffusion coefficient and the equilibrium concentration of gallium self-interstitials are a consistent splitting of the gallium interstitial dominated self-diffusion coefficient.

Copyright

References

Hide All
1. Fukuzawa, T., Semura, S., Saito, H., Ohta, T., Uchida, Y., and Nakashima, H., Appl. Phys. Lett. 45, 1 (1984).
2. Allen, E. L., PhD thesis, Stanford University, 1991.
3. Deppe, D. G. and Holonyak, N. Jr, J. Appl. Phys. 64, R93 (1988).
4. Yu, S., Tan, T.Y., and Gösele, U., J. Appl. Phys. 69, 3547 (1991).
5. Lee, J. W. and Laidig, W. D., J. Electronic Materials 13, 147 (1984).
6. Winteler, H. R., Helvetica Physica Acta 44, 451 (1970).
7. Enquist, P., Hutchby, J. A., and de Lyon, T. J., J. Appl. Phys. 63, 4485 (1988).
8. Tuck, B. and Adegboyega, G. A., J. Phys. D 12, 1985 (1979).
9. Deal, M. D. and Stevenson, D. A., J. Appl. Phys. 59, 2398 (1986).
10. Yu, S., Tan, T.Y., and Gösele, U., J. Appl. Phys. 70, 4827 (1991).
11. Tan, T. Y., Yu, S., and Gösele, U., J. Appl. Phys. 70, 4823 (1991).
12. Luysberg, M., Jäger, W., Urban, K., Schänzer, M., Stolwijk, N. A., and Mehrer, H., Materials Science and Engineering B 13, 137 (1992).
13. Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., and Pötzl, H. W., IEEE Trans. Hectron. Devices ED-32, 156 (1985).
14. Hsieh, K. Y., Lo, Y. C., Lee, J. H., and Kolbas, R. M., Inst. Phys. Conf. Ser. No 96, 393 (1989).
15. Stolwijk, N. A., Schuster, B., Hölzl, J. H., Mehrer, H., and Frank, W., Physica 116B, 335 (1983).
16. Zimmermann, H. and Ryssel, H., J. Electrochem. Soc. 139, 256 (1992).

A Consistent Model for Disordering of GaAs/AlAs- Superiattices During Zinc Diffusion

  • H. Zimmermann (a1), T. Y. Tan (a1) and U. Goesele (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed