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The Connection Between Structural Disorder and Semimagnetic Properties in Implanted CdTe

Published online by Cambridge University Press:  26 February 2011

H. J. Jiménez-González
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA
A. Lusnikov
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA
G. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA
G. H. Braunstein
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

The structural disorder and annealing characteristics of dilute magnetic semiconductors synthesized by implantation of Mn ions into CdTe are studied. After implantation but prior to annealing, the implanted Mn ions reside at random sites in a highly disordered CdTe lattice. To separate magnetic and nonmagnetic effects we have implanted CdTe with nonmagnetic Zn ions under the same conditions as the Mn ions (energy 60 keV, fluence 1016 cm−2). Various annealing conditions are applied to monitor the decrease in intensity of the disorder-induced photoluminescence peaks and the increase of the peak intensity of the CdTe-like exciton line is reduced.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

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