Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-19T12:47:00.162Z Has data issue: false hasContentIssue false
  • English
  • Français

Configurational Relaxation of the D Defect in Hydrogenated Amorphous Silicon as a Function of Fermi Energy

Published online by Cambridge University Press:  21 February 2011

Thomas M. Leen ,
Randall J. Rasmussen  and
J. David Cohen
Thomas M. Leen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
Randall J. Rasmussen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
Get access

Abstract

By using light soaking and partial dark annealing to vary the Fermi level in n-type a-Si:H, we have examined the thermal emission of electrons from the dangling bond (D) defect. We find optical evidence for a change in the configuration of the D defect when EF = Ec-0.55±0.08eV. We find that the relaxation rate increases with temperature and increases as EF is brought closer to Ec. Voltage-pulse photocapacitance and depletion-width-modulated ESR show emission is predominantly from D° defects for short emission times and short filling pulse widths. With longer emission times and longer filling pulse widths, emission from D-dominates. We also find that the charge emission transient fits a universal scaling law under a variety of pulsing conditions, temperatures, and anneal states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 211
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Leen, Thomas M. and Cohen, J. David, Mat. Res. Soc. Symp. Proc. 219, 39 (1991).10.1557/PROC-219-39Google Scholar
2. Leen, Thomas M. and Cohen, J. David, J. Non-Cryst. Solids 137 & 138, 319 (1991).10.1016/S0022-3093(05)80120-6Google Scholar
3. For a good review see LeComber, P.G. and Spear, W.E., Phil. Mag. B 53, L1 (1986).10.1080/13642818608238960Google Scholar
4. Schumm, G., Nitsch, K., Schubert, M., and Bauer, G.H., Mat. Res. Soc. Symp. Proc. 118, 543 (1988).10.1557/PROC-118-543Google Scholar
5. Zhong, Fan and Cohen, J. David, Mat. Res. Soc. Symp. Proc, this volume (1992).Google Scholar
6. Cohen, J.D. and Gelatos, A.V., in Advances in Amorphous Semiconductors, ed. by Fritzsche, H. (World Scientific, Singapore, 1988), pp. 475–512.Google Scholar
7. Experimental evidence for a constant optical matrix element is given in Jackson, W.B., Kelso, S.M., Tsai, C.C., Allen, J.W., and Oh, S.-J., Phys. Rev. B 31, 5187 (1985).10.1103/PhysRevB.31.5187CrossRefGoogle Scholar
8. Cohen, J. David and Lang, David V., Phys. Rev. B 25, 5321 (1982).10.1103/PhysRevB.25.5321CrossRefGoogle Scholar
9. Schroeder, Dieter K., Semiconductor Material and Device Characterization, (John Wiley & Sons, 1991), p. 304.Google Scholar
10. Lang, David V., Cohen, J. David, and Harbison, James P., Phys. Rev. B 25, 5285 (1982).10.1103/PhysRevB.25.5285CrossRefGoogle Scholar
11. Palmer, R.G., Stein, D.L., Abrahams, E., and Anderson, P.W., Phys. Rev. Lett. 53, 958 (1984).10.1103/PhysRevLett.53.958Google Scholar