Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-25T10:47:17.741Z Has data issue: false hasContentIssue false
  • English
  • Français

Conductivity and Ftir Measurements of the Hydrogen Content of Heat Treated Diamond Films

Published online by Cambridge University Press:  21 February 2011

T. Sung ,
S. Khasawinah ,
G. Popovici ,
M. A. Prelas ,
B. V. Spitsyn ,
G. Manning ,
S. Loyalka  and
R. V. Tompson
T. Sung
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211
S. Khasawinah
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211
G. Popovici
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211
M. A. Prelas
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211
B. V. Spitsyn
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211
G. Manning
Affiliation:
Particulate Systems Research Center, University of Missouri, Columbia, MO 65211
S. Loyalka
Affiliation:
Particulate Systems Research Center, University of Missouri, Columbia, MO 65211
R. V. Tompson
Affiliation:
Particulate Systems Research Center, University of Missouri, Columbia, MO 65211
Get access

Abstract

The content of bonded hydrogen in hot filament grown diamond films was determined by Fourier transform Infrared (FTIR) measurements before and after annealing. The quantity of bonded hydrogen was found to remain unchanged on annealing in diamond films with high amounts of microcrystalline diamond and amorphous carbon. The hydrogen content was found to decrease on annealing ∼9 times in diamond film of good crystalline quality. The change of the bulk hydrogen content did not seem to be linked to changes in resistivity of the samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 643
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Khasavinah, S., Sung, T., Spitsyn, B., Miller, W. H., Popovici, G., Prelas, M. A., Charlson, E. J., Charlson, E. M., Meese, J., Stacy, T., Mannig, G., Loyalka, S., Tomson, R. V., Chamberlain, J. and White, H., Diamond Materials, ed. Dismukes, J. P. and Ravi, K. V., Electrochemical Societ y Proc. v.93–17, 1993, p. 1032–1035 Google Scholar
2. Kamo, M., Yurimoto, H., Ando, T., and Sato, S., New Diamond Science and Technology, Proc. Second Int. Conf., 1990, Washington D.C., MRS, p. 637 - 641Google Scholar
3. Landstrass, M. I. and Ravi, K. V., Appl. Phys. Lett. 55, 1391 (1989).Google Scholar
4. Celii, F. G., Purdes, A. J., Gnade, B. E. and Weathers, D. L., New Diamond Science and Technology, 631 (1991).Google Scholar
5. Albin, Sacharia and Watkins, Linwood, IEEE Electron Devices 11, 159 (1990).Google Scholar
6. Zhang, Wenjun, Zhang, Fangqing, Wu, Quanzhong and Chen, Guanghua, Material Letters, 15, 292 (1992).Google Scholar
7. Geissman, T. A., Principles of Organic Chemistry, W. H. Freeman and Co, San Francisco, 1977, p. 392–400 Google Scholar
8. Anthony, T. R., Proc. MRS Symposium, MRS 1990, v. 162 p. 61 Google Scholar