Skip to main content Accessibility help
×
Home

Conducting AFM: Applications to Semiconductor Surfaces

  • Martin P. Murrell (a1), Sean J. O'Shea (a2), Jack Barnes (a2), Mark E. Welland (a2) and Carl J. Sofield (a3)...

Abstract

The use of Conducting Probe Atomic Force Microscopy to give nm scale electronic characterisation of surfaces is reviewed. Local conductance, Kelvin Probe work function measurements, Fowler-Nordheim tunnelling and local C-V characterisation techniques are outlined. The principle results of these and their applications to the semiconductor surface and thin film characterisation are discussed. We present tunnelling data from silicon through varying oxide thickness using conducting AFM and scanning Kelvin Probe measurements from sub micron MOS capacitors. The F-N tunnelling technique has also been used on epitaxial silicon surfaces with atomically flat topography.

The inherent problems associated with quantitative, reproducible measurements are outlined, and the potential applications of the measurements to surface and thin film technology are discussed.

Copyright

References

Hide All
1) Wong, T.M H. and Welland, M.E., Meas. Sci. Technol. 4 (1993).
2) Sofield, C.J., Murrell, M.P., Sugden, S., Heyns, M., Verhaverbeke, S., Welland, M E., Golan, B. and Barnes, J.. MRS Spring Meeting Proc. 259 3, San Francisco CA, 1992
3) Verhaverbeke, S., Meuris, M, Heyns, M. M, De Keersmaecker, R.F., Murrell, M.P. and Sofield, C.J., Electrochemical Soc. Proc 92 187 1991
4) Fukano, Y., Sugawara, Y., Morita, S., Yamanishi, Y. and Oasa, T., Extended abstracts 1992 SSDM Conference, p 117–119, Tsukuba, Japan.
5) O'Shea, S-J., Atta, R-M, Murrell, M P. and Welland, M.E., Submitted to J.Vac. Sci- Tech.
6) Nonnenmacher, N., O'Boyle, M. P. and Wickramasinghe, H. K.. Appl. Phys. Lett. 58 (25) 1991.
7) Maria, D.J. Di, Extended abstracts 1993 SSDM Conference,, Makuhari, Japan.
8) Yasutake, M., Ejiri, Y. and Hattori, T., Jpn. J, Appl. Phys. Let. 32 (7B).
9) Murrell, M.P., Welland, M.E., O'Shea, S. J., Wong, T.M H., Barnes, J R., McKinnon, A.W., Heynes, M. and Verhaverbeke, S., Appl. Phys. Lett. 62 (7) 1993.
10) Lanyi, S., Torok, J. and Rehurek, P., Rev. Sci. Instrum. 65 (7) 1994
11) Huang, Y., Williams, C.C. and Slinkman, J.. Appl. Phys. Lett. 66 (3) 1995
12) Huang, Y., Williams, C.C., J. Vac. Sci. Technol. B 12 (1) 1994
13) Baike, Ian D. PhD. Thesis, University of Twente 1988.
14) Terrs, B.D., Stern, J.E., Rugar, D. and Mamin, H.J., J. Vac. Sci. Technol. A 8 (1) 1990
15) Terrs, B.D., Stem, J E., Rugar, D. and Mamin, H.J., Phy. Rev. Lett. 63 (24) 1989.
16) Stern, J.E., Terrs, B.D., Mamin, H.J. and Rugar, D., Appl. Phys. Lett. 53 (26) 1988
17) Schonenberger, C. and Alvarado, S.F. Phy. Rev. Lett. 65 (25) 1990.
18) Martin, Y., Abraham, D.W. and Wickramasinghe, H.K., Appl. Phys. Lett. 52 (13) 1988
19) Henning, A.K., Hochwitz, T., Slinkman, J., Never, J., Hoffmnann, S., Kaszuba, P. and Daghlian, C., J. Appl. Phys. 77 (5) 1995.

Conducting AFM: Applications to Semiconductor Surfaces

  • Martin P. Murrell (a1), Sean J. O'Shea (a2), Jack Barnes (a2), Mark E. Welland (a2) and Carl J. Sofield (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed