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Conductance Transients Study of Slow Traps in Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

Published online by Cambridge University Press:  10 February 2011

S. Dueñas ,
R. Peláez ,
E. Castán ,
J. Barbolla ,
I. Mártil  and
G. Gonzalez-Diaz
S. Dueñas
Affiliation:
Dept. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, SPAIN, sduenas@ele.uva.es
R. Peláez
Affiliation:
Dept. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, SPAIN, sduenas@ele.uva.es
E. Castán
Affiliation:
Dept. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, SPAIN, sduenas@ele.uva.es
J. Barbolla
Affiliation:
Dept. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, SPAIN, sduenas@ele.uva.es
I. Mártil
Affiliation:
Dept. Electricidad y Electrónica, Facultad de Física, Universidad Complutense de Madrid, 28040 Madrid, SPAIN
G. Gonzalez-Diaz
Affiliation:
Dept. Electricidad y Electrónica, Facultad de Física, Universidad Complutense de Madrid, 28040 Madrid, SPAIN
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Abstract

We have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200°C. The electrical properties of the structures were first analyzed by Capacitance-Voltage measurements and Deep-Level Transient Spectroscopy (DLTS). Some discrepancies in the absolute value of the interface trap densities were found. Later on, Admittance measurements were carried out and room and low temperature conductance transients in the silicon nitride/semiconductor interfaces were found. The shape of the conductance transients varied with the frequency and temperature at which they were obtained. This behavior, as well as the previously mentioned discrepancies, are explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 87
Copyright
Copyright © Materials Research Society 1998

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References

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