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Conductance transient comparative analysis of ECR-PECVD deposited SiNx, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

Published online by Cambridge University Press:  01 February 2011

H. Castán ,
S. Dueñas ,
J. Barbolla ,
A. Del Prado ,
E. San Andrés ,
I. Mártil  and
G. González-Díaz
H. Castán
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
S. Dueñas
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
J. Barbolla
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
A. Del Prado
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
E. San Andrés
Affiliation:
Departamento de Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas, Universidad Complutense, 28040 Madrid., Spain.
I. Mártil
Affiliation:
Departamento de Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas, Universidad Complutense, 28040 Madrid., Spain.
G. González-Díaz
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
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Abstract

A study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiOxNy films deposited on silicon by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) is presented. Interface trap densities measured by deep level transient spectroscopy (DLTS) are higher for silicon oxynitride-based MIS capacitors than for silicon nitride and silicon oxide-silicon nitride-based ones. However, conductance transient analysis demonstrated that Al/SiNx/Si devices exhibit the highest disordered-induced gap states (DIGS) density, whereas the lowest one corresponds to Al/SiNx/SiO2/Si, and silicon oynitride-based MIS capacitors show an intermediate behaviour. In addition, thermal treatments applied to Al/SiOxNy/Si samples reduce DIGS densities to values even lower than those corresponding to Al/SiNx/SiO2/Si devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E3.12
Copyright
Copyright © Materials Research Society 2004

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References

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