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Conductance Measurements of Thermally Annealed, Si-Implanted Quartz

Published online by Cambridge University Press:  21 February 2011

Alex R.Hodges
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435.
Gary C. Farlow
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435.
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Abstract

Preliminary conductance measurements of Si implanted, α-Quartz which had been annealed in ar to 1000• C have been made using a bridge method. the quartz was implanted to a dose expected to yield Si precipitates inside the quartz upon annealing. the measured conductivity, based on a geometry deduced from TRIM calculations and several trans-conductance measurements, is ~ 2 х 10-4(Ω m)-1. This is consistent with large islands of Si in series with an insulating matrix.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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