The “Computer-Aided Epitaxy” Si:MBE-Control System
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- DOI: https://doi.org/10.1557/PROC-220-55
- Published online by Cambridge University Press: 22 February 2011
Abstract
A dedicated, grower-friendly MBE computer control system is described, and its performance in demonstrated in growth of high resolution doped SiGe structures.
Copyright
COPYRIGHT: © Materials Research Society 1991
References
The “Computer-Aided Epitaxy” Si:MBE-Control System
-
- DOI: https://doi.org/10.1557/PROC-220-55
- Published online by Cambridge University Press: 22 February 2011