Skip to main content Accessibility help
×
Home

Computer Simulation of Si and C Atoms on SiC Surfaces

  • C C Matthai (a1), G J Moran (a1) and I Morrison (a1)

Abstract

The molecular dynamics method employing an empirical potential energy function to describe the Si-C interaction has been used to determine the minimum energy sites for Si and C adatoms on C-terminated SiC (001) substrates. It is found that whereas a single C adatom lies on the carbon dimer bond, this site only becomes energetically favourable for silicon adatoms when they interact to form a dimer pair.

Copyright

References

Hide All
1. Ivanov, P A and Chelnokov, V E, Semicond Sci Technol 7 863 (1992)
2. Dayan, M, J Vac Sci Technol A3 361 (1985)
3. Craig, B I, Semicond Sci Technol 8 172 (1993)
4. Mehandru, S P and Anderson, A P, Phys Rev B42 9040 (1992)
5. Ashu, P and Matthai, C C, Appl Surf Sci 48/49 39 (1991)
6. Tersoff, J, Phys Rev B39 5566 (1989)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed