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Computer Simulation of Displacement Damage in Silicon Carbide

Published online by Cambridge University Press:  01 February 2011

R. Devanathan ,
F. Gao  and
W. J. Weber
R. Devanathan
Affiliation:
Fundamental Science Directorate, Pacific Northwest National Laboratory, MS K8–93, Richland, WA 99352, U.S.A.
F. Gao
Affiliation:
Fundamental Science Directorate, Pacific Northwest National Laboratory, MS K8–93, Richland, WA 99352, U.S.A.
W. J. Weber
Affiliation:
Fundamental Science Directorate, Pacific Northwest National Laboratory, MS K8–93, Richland, WA 99352, U.S.A.
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Abstract

We have performed molecular dynamics simulation of displacement events on silicon and carbon sublattices in silicon carbide for displacement doses ranging from 0.005 to 0.5 displacements per atom. Our results indicate that the displacement threshold energy is about 21 eV for C and 35 eV for Si, and amorphization can occur by accumulation of displacement damage regardless of whether Si or C is displaced. In addition, we have simulated defect production in high-energy cascades as a function of the primary knock-on atom energy and observed features that are different from the case of damage accumulation in Si. These systematic studies shed light on the phenomenon of non-ionizing energy loss that is relevant to understanding space radiation effects in semiconductor devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 851: Symposium NN – Materials for Space Applications , 2004 , NN7.7
Copyright
Copyright © Materials Research Society 2005

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References

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