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Computer Simulation of Annealing after Cluster Ion Implantation

Published online by Cambridge University Press:  14 June 2011

Z. Insepov ,
T. Aoki ,
J. Matsuo  and
I. Yamada
Z. Insepov
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japaninsepov@kuee.kyoto-u.ac.jp
T. Aoki
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japaninsepov@kuee.kyoto-u.ac.jp
J. Matsuo
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japaninsepov@kuee.kyoto-u.ac.jp
I. Yamada
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japaninsepov@kuee.kyoto-u.ac.jp
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Abstract

Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed in this paper. The implanted B dopant diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The B diffusion coefficient shows an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2, was obtained for a low-temperature region, and a higher activation energy, ˜ 3 ev, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 ev, for B diffusion in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 147
Copyright
Copyright © Materials Research Society 1998

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References

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