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Computer Modelling of Non-Equilibrium Multiple-Trapping and Hopping Transport in Amorphous Semiconductors

  • C. Main (a1), J. M. Marshall (a2), S. Reynolds (a3), M.J. Rose (a1) and R. Brüggemann (a4)...

Abstract

In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. Using the same model concepts, we now employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.

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2 Tiedje, T., Rose, A., Sol. State Comm. 37, 49 (1980).10.1016/0038-1098(81)90886-3
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5 Marshall, J. M., J. Mat. Sci.: Materials in Electronics 14, 611 (2003).
6 Main, C., Berkin, J., Merazga, A., in New Physical Problems in Electronic Materials ed. Kirov, N., Vavrek, A, Marshall, J.M., World Scientific Press, Singapore, 1991, p 55.
7 Main, C., Brüggemann, R., Webb, D.P., Reynolds, S., J. Non-Cryst. Solids, 165/166, 481 (1993).10.1016/0022-3093(93)90594-N

Computer Modelling of Non-Equilibrium Multiple-Trapping and Hopping Transport in Amorphous Semiconductors

  • C. Main (a1), J. M. Marshall (a2), S. Reynolds (a3), M.J. Rose (a1) and R. Brüggemann (a4)...

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