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Compositions and Chemical Bonding in Ceramics by Quantitative Electron Energy-Loss Spectrometry

Published online by Cambridge University Press:  21 February 2011

J. Bentley ,
L.L Horton ,
C.J. Mchargue ,
S. Mckernan ,
C.B. Carter ,
A. Revcolevschi ,
S. Tanaka  and
R.F. Davis
J. Bentley
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, PO Box 2008. Oak Ridge, TN 37831-6376
L.L Horton
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, PO Box 2008. Oak Ridge, TN 37831-6376
C.J. Mchargue
Affiliation:
Now at: The University of Tennessee, Knoxville, TN 37993) Metals and Ceramics Division, Oak Ridge National Laboratory, PO Box 2008. Oak Ridge, TN 37831-6376
S. Mckernan
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE, Minneapolis, MN 55455-0132
C.B. Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE, Minneapolis, MN 55455-0132
A. Revcolevschi
Affiliation:
Laboratoire de Chimie des Solides. CNRS UA 446, Université Paris-Sud. Bâtiment 414. 91405 Orsay Cedex, France
S. Tanaka
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, PO Box 7907, Raleigh, NC 27695-7907
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, PO Box 7907, Raleigh, NC 27695-7907
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Abstract

Quantitative electron energy-loss spectrometry was applied to a range of ceramic materials at a spatial resolution of <5 nm. Analysis of Fe L23 white lines indicated a low-spin state with a charge transfer of ∼1.5 electrons/atom onto the Fe atoms implanted into (amorphized) silicon carbide. Gradients of 2 to 5% in the Co:O stoichiometry were measured across 100-nm-thick Co3O4 layers in an oxidized directionally solidified CoO-ZrO2 eutectic, with the highest O levels near the ZrO2. The energy-loss near-edge structures were dramatically different for the two cobalt oxides: those for Co3O4 have been incorrectly ascribed to CoO in the published literature. Kinetically stabilized solid solubility occurred in an AIN-SiC film grown by low-temperature molecular beam epitaxy (MBE) on α(6H)-SiC, and no detectable interdiffusion occurred in couples of MBE-grown AIN on SiC following annealing at up to 1750°C. In diffusion couples of polycrystalline AIN on SiC, interfacial 8H sialon (aluminum oxy-nitride) and pockets of Si3N4-rich β'sialon in the SiC were detected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 385
Copyright
Copyright © Materials Research Society 1994

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References

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