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Composition Quantification of Microelectronics Multilayer Thin Films by EDX: Toward Small Scale Analysis

Published online by Cambridge University Press:  31 January 2011

Thierry Conard
Affiliation:
tconard@imec.be, IMEC, Leuven, Belgium
Kai Arstila
Affiliation:
arstila@imec.be, IMEC, Leuven, Belgium
Thomas Hantschel
Affiliation:
hantsche@imec.be, IMEC, Leuven, Belgium
Alexis Franquet
Affiliation:
franquet@imec.be, IMEC, Leuven, Belgium
Wilfried Vandervorst
Affiliation:
vdvorst@imec.be, IMEC, Leuven, Belgium
Emma Vecchio
Affiliation:
vecchio@imec.be, IMEC, Leuven, Belgium
Simon Burgess
Affiliation:
Simon.BURGESS@oxinst.com, Oxford Instruments NanoAnalysis, High Wycombe, United Kingdom
Frank Bauer
Affiliation:
Frank.BAUER@oxinst.com, Oxford Instruments GmbH Analytical, NanoAnalysis, Wiesbaden, Germany
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Abstract

In order to continuously improve the performances of microelectronics devices through scaling, SiO2 is being replaced by high-k materials as gate dielectric; metal gates are replacing poly-Si. This leads to increasingly more complex stacks. For future generations, the replacement of Si as a substrate by Ge and/or III/V material is also considered. This also increases the demand on the metrology tools as a thorough characterization, including composition and thickness is thus needed. Many different techniques exist for composition analysis. They usually require however large area for the analysis, complex instrumentation and can be time consuming. EDS (Energy Dispersive Spectroscopy) when coupled to Scanning Electron Microscopy (SEM) has the potential to allow fast analysis on small scale areas.

In this work, we evaluate the possibilities of EDS for thin film analysis based on an intercomparison of composition analysis with different techniques. We show that using proper modeling, high quality quantitative composition and thickness of multilayers can be achieved.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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