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The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE

Published online by Cambridge University Press:  10 February 2011

Yasutoshi Kawaguchi ,
Masaya Shimizu ,
Kazumasa Hiramatsu  and
Nobuhiko Sawaki
Yasutoshi Kawaguchi
Affiliation:
Nagoya University, Department of ElectronicsFuro-cho, Chikusa-ku, Nagoya 464–01, Japan
Masaya Shimizu
Affiliation:
Nagoya University, Department of ElectronicsFuro-cho, Chikusa-ku, Nagoya 464–01, Japan
Kazumasa Hiramatsu
Affiliation:
Nagoya University, Department of ElectronicsFuro-cho, Chikusa-ku, Nagoya 464–01, Japan
Nobuhiko Sawaki
Affiliation:
Nagoya University, Department of ElectronicsFuro-cho, Chikusa-ku, Nagoya 464–01, Japan
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Abstract

InGaN has been grown on GaN and AlGaN epitaxial layers by metalorganic vapor phase epitaxy (MOVPE) and ‘the composition pulling effect’ at the initial growth stage of InGaN has been studied in relation to the lattice mismatch between InGaN and the bottom epitaxial layers. Crystalline quality of InGaN is good near the interface of InGaN/GaN and the composition of InGaN is close to that of GaN. With increasing growth thickness, the crystalline quality becomes worse and the indium mole fraction is increased. The composition pulling effect becomes stronger with increasing lattice mismatch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 89
Copyright
Copyright © Materials Research Society 1997

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References

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