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Composition and Electrode Effects on the Electrical Properties of SrBi2Ta2O9

Published online by Cambridge University Press:  10 February 2011

Darin T. Thomas ,
Norifumi Fujimura ,
S. K. Streiffer  and
Angus I. Kingon
Darin T. Thomas
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC
Norifumi Fujimura
Affiliation:
Osaka Prefecture University, Osaka, Japan
S. K. Streiffer
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC
Angus I. Kingon
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC
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Abstract

SrBi2Ta2O9 has attracted great interest for non-volatile memory applications due to its minimal polarization fatigue. This paper describes systematic studies, using pulsed laser deposition, on the effect of deposition conditions on the Bi-Pt reaction and on the potential for low temperature processing. Changing the deposition temperature (Ts) and oxygen gas pressure during deposition can control the Bi content in the films. At a Ts of 600°C, the films have excess Bi and do not fully crystallize to SBT, resulting in poor remnant polarization (Pr). These films consist mostly of the pyrochlore phase, plus a small amount of disordered, c-oriented layered perovskite SBT. By annealing over 750°C, the films show improved Pr, but further Pt - Bi interactions occur. At a Ts of 700°C, the as-deposited films are fully crystallized and show saturated hysteresis loops. However, Bi deficiency through alloying results in reduced remnant polarization (2Pr = 7.0μC/cm2). Films on Ir/Pt show reduced electrode reactions and improved properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 153
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Paz de Araujo, C.A., Cuchiaro, J.D., Scott, M.C., and McMillan, L.D., International Patent Application W093/12545 (1993)Google Scholar
2. Mihara, T., Watanabe, H., Paz de Araujo, C. A., Cuchiaro, J.D., Scott, M.C., and McMillan, L.D., in Proc 4th International Symposium on Integrated Ferroelectrics (Univ. of Colorado Press), 1992, pp. 137 Google Scholar
3. Amanuma, K., Hase, T., and Miyasaka, Y., Mat. Res. Soc. Symp. Proc. 361, pp. 21–25 Google Scholar
4. Dat, R., Lee, J.K., Auciello, O., and Kingon, A.I., App. Phys. Letters, 67, pp. 572, (1995)Google Scholar
5. Thomas, D., Fujimura, N., Streiffer, S.K., and Kingon, A.I., Integrated Ferroelectrics, 14, pp. 51–57 Google Scholar
6. Newnham, R.E., Wolfe, R.W., Horsey, R.S., and Diaz-Colon, F.A., Mat. Res. Bull, 8, pp. 1183–1196, 1973 Google Scholar
7. Materials Handbook, Brady, G.S., Clauser, H.R., eds., 13, McGraw Hill, p. 972, (1991)Google Scholar
8. Binary Phase Diagrams, American Society of Metals, pp. 751–752, 777–778, 783–785, 798Google Scholar
9. Ryden, W.D., Lawson, A.W., and Sartain, C.C., Phys. Rev. B. 1, No. 4, pp. 1494–1500, (1970)Google Scholar