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Composite Nanowires from Ion Beam Modification of Si Nanowires

Published online by Cambridge University Press:  21 February 2011

X. T. Zhou
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
H. Y. Peng
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
N. G. Shang
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
N. Wang
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
I. Bello
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
C. S. Lee
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
S. T. Lee
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
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Abstract

Composite nanowires with typical diameters of 30-100nm, which consisted of Si, β-SiC, amorphous carbon were converted from Si nanowires by ion beam deposition. The Si nanorods were exposed to broad low energy ion beams. The low energy hydrocarbon, argon and hydrogen ions, generated in a Kaufman ion source, reacted with Si nanowires and formed the composite nanowires. It has been assumed that the reaction pathway to form the composite nanowires were driven by both thermal diffusion and kinetic energic of interacting particles.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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