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Compensating for Light Soaking Effects in Optically Addressed Spatial Light Modulators Incorporating A-Si:H Photodiodes

Published online by Cambridge University Press:  25 February 2011

C. M. Walker ,
B. Landreth  and
G. Moddel
C. M. Walker
Affiliation:
Department of Electrical and Computer Engineering and Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309-0425
B. Landreth
Affiliation:
Department of Electrical and Computer Engineering and Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309-0425
G. Moddel
Affiliation:
Department of Electrical and Computer Engineering and Optoelectronic Computing Systems Center, University of Colorado, Boulder, CO 80309-0425
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Abstract

We characterize the effects of light soaking on optically addressed spatial light modulators (OASLMs) incorporating a-Si:H photodiodes and relate these effects to the light-induced degradation observed in the photodiodes. After illuminating the OASLMs with white light for up to 100 hours, the rise time of the OASLM optical response decreases, the fall time increases, and the undesirable modulation in the absence of write light (electrical modulation) also increases. We were able to compensate for these effects and approximately restore the original optical transfer characteristics by applying a dc offset voltage across the device. The results can be interpreted by considering series resistance changes in the a-Si:H photodiode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 467
Copyright
Copyright © Materials Research Society 1990

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References

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