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Comparison Study for TiN Films Deposited from Different Method: Chemical Vapor Deposition and Atomic Layer Deposition

  • Byoung-Youp Kim (a1), Seung-Hyun Lee (a1), Sang-Gee Park (a1), Ki-Young Oh (a1), Juho Song (a1) and Do-Heyoung Kim (a2)...


This paper compared two different film deposition processes for formation of TiN barrier layers, conventional TiCl4-based chemical vapor deposition and atomic layer deposition (ALD). The 30nm thick TiN film deposited by conventional TiCl4-based CVD at the process temperature of 600°C followed by NH3 post-deposition anneal showed about 180 μΩcm of resistivity, over 95 % of step coverage for the pattern aspect ratio of 6 on 0.35 μm contact diameters, and below 2 at.% of chlorine contents in the film. Meanwhile, the films deposited by ALD at 100°C lower process temperature than CVD showed much better film properties even without post-deposition anneal. It showed lower resistivity values and lower chlorine incorporation along with better step coverage characteristics. More detailed material analysis was done by AFM, SEM, and AES.



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[1] Price, J. E. Borland, J. O. and Selbrede, S., Thin Solid Films 236 (1993) 311318
[2] Homoyoun, Talieh, Avi, Tepman, Thi, Kieu Hoa and Chien-Rhone, Wang, US Patent 5171412
[3] Liubo, Hong, Hougong, Wang, Gongda, Yao and Zheng, Xu, US Patent 6077402
[4] Travis, E. O. and Fiordalice, R. W., Thin Solid Films, 236(1993) 325329
[5] Hillman, J. T. and Studiner, D. W., VMIC Conf. Proc. 1992, 295297
[6] Dekker, J. P., Put, P.J. van der, Veringa, H.J and Schoonman, J., J. Electrochem. Soc., Vol.141, No. 3, March 1994 787795
[7] Raaijmakers, I. J. and Yang, J., Applied Surface Science 73(1993) 3141
[8] Ishihara, K., Yamazaki, K., Hamada, H., Kamisako, K. and Tarui, Y., Jpn. J. Appl. Phys., Vol.29, No. 10 (1990) 21032105
[9] Suntola, T., Atomic Layer Epitaxy, Handbook of Crystal Growth, 3, 601, edited by Hurle, D. T. J. (1994).
[10] Satta, A., Beyer, G., Maex, K., Elers, K., Haukka, S., A Vatomme, Mat. Res. Soc. Symp. Proc. Vol.. 612 (2000)
[11] Ritala, M., Leskela, M., Rauhala, E. and Haussalo, P., J. Electrochem. Soc., Vol.142, No.8, 1995 27312737
[12] Ahn, S. D., Lee, H. B. and Kang, S. W., Jpn. J. Appl. Phys., Vol.39, part1, No.6A, (2000) 33493354


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