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Comparison of the Microstructure of AlN Films Grown by MOCVD and by PLD on Sapphire Substrates

  • Yun-Xin Li (a1), Lourdes Salamanca-Riba (a1), V. Talyan (a2), T. Venkatesan (a2), C. Wongchigul (a3), P. Zhou (a3), X. Tang (a3) and M. G. Spencer (a3)...

Abstract

(0001) aluminium nitride thin films were grown epitaxially on (0001) Sapphire substrates by MOCVD at 1200° C and PLD at 800° C. Both films have the same epitaxial growth relationship: (0001)AlN//(0001)Sap, and the same in-plane relationship which shows a 30° rotation between A1N and Sapphire: [ 12 10]AlN//[0 110]Sap and [10 10]AlN //[ 2110]Sap. The full width at half maximum (FWHM) of x-ray rocking curve of the MOCVD A1N film was 0.16° and PLD A1N film was 0.2°. Films grown by both MOCVD and PLD showed high crystalline quality. HRTEM images showed that these films are single crystalline with very low density of defects.

Dislocations in the film parallel to the film / substrate interface were observed in both A1N films. Atomic force microscopy images showed that the MOCVD films have flatter and larger terraces than the PLD films. The PLD technique for A1N growth needs to be improved further. But both films have a surface roughness of approximately 100nm.

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1. Yoshida, S., Misawa, S., Fujii, Y., Takada, S., Gonda, S. and Itoh, A., J. Appl.Phys. 53, 6844(1982).
2. Strite, S. and Morkoc, H., J.Vac.Sci.Technol. B10, 1237 (1992) and references therein.
3. Dovidenko, K., Oktyabrsky, S., and Narayan, J., J. Appl. Phys. 79 (5), 2439(1996).
4. Vispute, R.D., Narayan, J., Wu, Hong, and Jagannadham, K., Appl.Phys. Lett. 77, 4724(1995).
5. Talyansky, V., Sharma, R.P., Chapoon, S., Downes, M., Li, Y.X., Salamanca-Riba, L., Tang, X., Spenser, M.G. and Venkatesan, T., Materials Research Society, 1996, Boston, MA, Fall Meeting.
6. Saenger, K.L., Processing of Advanced Materials, vol 3(1), 1 (1993).
7. Razeghi, M., The MOCVD challenge (Institute of Physics Publishing, Bristle and Philadelphia, 1995), P 22.

Comparison of the Microstructure of AlN Films Grown by MOCVD and by PLD on Sapphire Substrates

  • Yun-Xin Li (a1), Lourdes Salamanca-Riba (a1), V. Talyan (a2), T. Venkatesan (a2), C. Wongchigul (a3), P. Zhou (a3), X. Tang (a3) and M. G. Spencer (a3)...

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