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A Comparison of the Gas Phase Processes Resulting from SiH4 and Si2H6 Photodissociation with a Pulsed ArF Excimer Laser

Published online by Cambridge University Press:  25 February 2011

E. Boch ,
C. Fuchs ,
E. Fogarassy  and
P. Siffert
E. Boch
Affiliation:
Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (ER du CNRS n°292), 23, rue du Loess, F-67037 Strasbourg Cedex, France
C. Fuchs
Affiliation:
Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (ER du CNRS n°292), 23, rue du Loess, F-67037 Strasbourg Cedex, France
E. Fogarassy
Affiliation:
Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (ER du CNRS n°292), 23, rue du Loess, F-67037 Strasbourg Cedex, France
P. Siffert
Affiliation:
Centre de Recherches Nucleaires (IN2P3), Laboratoire PHASE (ER du CNRS n°292), 23, rue du Loess, F-67037 Strasbourg Cedex, France
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Abstract

We present in this paper a comparison of the photodissociation processes of SiH4 and Si2H6 under pulsed excimer laser at 193 nm. The experimental curves of the gas composition as a function of laser energy density show that the dissociation of Si2H6 results from both one and two-photon absorption whereas SiH4 only absorbs two photons. The deposition yield of Si2H6 has also been determined as a function of the number of laser pulses or initial pressure. These experimental results show the establishment of a stationary state in the gas phase and prove the existence of reverse reactions in the disilane kinetic model. The photodissociation of Si2H6 under UV laser excitation (193 nm) presents, therefore, similar properties to those of SiH4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 195
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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