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A Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation

  • Bhushan Sopori (a1), Srinivas Devayajanam (a1) (a2), Prakash Basnyat (a1), Vishal Mehta (a1), Helio Moutinho (a1), Bill Nemeth (a1), Vincenzo LaSalvia (a1), Steve Johnston (a1), N.M. Ravindra (a2), Jeff Binns (a3) and Jesse Appel (a4)...

Abstract

We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.

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Sopori, B., Rupnowski, P., Appel, J., Guhabiswas, D., Anderson-Jackson, L., “Light-Induced Passivation of Si by Iodine Ethanol Solution”, Materials Research Society (MRS) Fall Meeting, Boston, pp.137144, 2008, and the references therein.

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A Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation

  • Bhushan Sopori (a1), Srinivas Devayajanam (a1) (a2), Prakash Basnyat (a1), Vishal Mehta (a1), Helio Moutinho (a1), Bill Nemeth (a1), Vincenzo LaSalvia (a1), Steve Johnston (a1), N.M. Ravindra (a2), Jeff Binns (a3) and Jesse Appel (a4)...

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