Hostname: page-component-7bb8b95d7b-qxsvm Total loading time: 0 Render date: 2024-09-20T17:21:40.555Z Has data issue: false hasContentIssue false

Comparison of Lateral Field Emitter Characteristics for Titanium Silicide, Poly-Si, and Single Crystal Si Tip

Published online by Cambridge University Press:  10 February 2011

Moo-Sup Lim
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, KoreaPhone: +82-2-880-7248, Fax: +82-2-873-0827, E-mail :, mkh@emlab.snu.ac.kr
Cheol-Min Park
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, KoreaPhone: +82-2-880-7248, Fax: +82-2-873-0827, E-mail :, mkh@emlab.snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, KoreaPhone: +82-2-880-7248, Fax: +82-2-873-0827, E-mail :, mkh@emlab.snu.ac.kr
Yearn-Ik Choi
Affiliation:
School of Electrical Eng., Ajou Univ., Wonchun-dong, Suwon 442-749, Kyung-ki do, Korea
Get access

Abstract

We have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of emission current. Although poly-Si and Si emitter have almost identical turn-on voltages, Si emitter has a sharper turn-on than poly-Si emitter due to its uniform surface. The current densities of poly-Si, and Si emtter are 0.47, 0.43 μA/tip respectively at anode to cathode voltage of 90 V. The turn-on voltage and current density of Ti-silicide emitter are about 31 V, and 1.81 μA/tip at VAK of 90 V. The data of the normalized current fluctuations indicate that Ti-silicide emitter has the most stable current.

Our experiment shows that Ti-silicide is most promising among these three materials due to its low work function, uniform surface, and the stable characteristics.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Higa, K., Nishii, K. and Asano, T., Tech. Dig. 10th Int. Vacuum Microelectronics Conf. pp. 78 (1997)Google Scholar
2 Spindt, C. A., Holland, C. E., Rosenberg, A., and Brodie, I., IEEE Trans. Electron Devices, vol. 38, no. 10, pp. 2355 (1991)Google Scholar
3 Jung, J. H., Ju, B. K., Lee, Y. H., Oh, M. H., and Jang, J., Tech. Dig. IEDM-96, pp. 293 (1996)Google Scholar
4 Wang, C. C., Ku, T.K., Hsieh, L.J., and Cheng, H. C., Jpn. J. Appl. Phys. vol. 35, pp 3681 (1996)Google Scholar
5 Park, C. M., Lim, M. S., Min, B. H., Han, M. K., and Choi, Y. I., Tech. Dig. IEDM-96, pp. 305 (1996)Google Scholar
6 Park, C. M., Lim, M. S., and Han, M. K., IEEE Electron Device Letters, vol. 18, no. 11, November, pp. 538 (1997)Google Scholar