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A comparison of in situ As doping with ex situ CdCl2 treatment of CdTe solar cells

  • Vincent Barrioz (a1), Rachael L. Rowlands (a1), Eurig W. Jones (a1), Stuart J. C. Irvine (a1), Guillaume Zoppi (a2) and Ken Durose (a2)...

Abstract

A comparison has been made of MOCVD grown CdTe/CdS solar cells processed either by ex situ annealing with CdCl2 or doping with arsenic, in situ, together with various optional anneals. A materials comparison was made of both routes using Jsc measurements on arrays of gold contacts to the CdTe. The Jsc increased from around 1 mA cm-2 for undoped and unannealed layers to a range of 25-30 mA cm-2 for CdCl2 annealed layers. In situ arsenic doping resulted in Jsc values up to 18 mA cm-2. The annealing characteristics were very different for these films, compared with the CdCl2 annealed films, with annealing at 500°C dramatically reducing the Jsc. Only annealing under nitrogen at 400°C produced an improvement in Jsc and further evidence from SIMS analysis suggests that hydrogen passivation of the arsenic dopant may have a significant effect on the dopant activity.

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A comparison of in situ As doping with ex situ CdCl2 treatment of CdTe solar cells

  • Vincent Barrioz (a1), Rachael L. Rowlands (a1), Eurig W. Jones (a1), Stuart J. C. Irvine (a1), Guillaume Zoppi (a2) and Ken Durose (a2)...

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