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Comparison of Growth and Microstructure of Copper Films Deposited From Different Cu(Ii) Precursors

  • J. Goswami (a1), S.A. Shivashankar (a1), Lakshmi Raghunathan (a1), Anjana Devi (a1) and K.V. Ramanathan (a1)...

Abstract

High quality copper thin films have been obtained by low pressure thermally-activated chemical vapour deposition from two different Cu(II) metalorganic precursors, (a) bis(dipivaloyl-methanato) Cu (II) or Cu(dpm)2 and (b) bis(t-butylaceto acetato)Cu(II) or Cu(tbaoac)2, the latter synthesised with a view to reducing the deposition temperature. A comparative study of the volatility and thermal stability of the two precursors, as well as of the growth and microstructure of copper films from these two precursors, is presented.While the threshold deposition temperature is significantly lower for Cu(tbaoac)2 compared to Cu(dpm)2, the growth rate is considerably higher with Cu(dpm)2-Films obtained from Cu(tbaoac)2 are denser and of lower resistivity at a given thickness compared to those from Cu(dpm)2, and are also smoother, exhibiting mirror-like reflectivity.

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1 Murarka, S.P., Gutmann, R.J., Kaloyeros, A.E., and Lanford, W.A., Thin Solid Films, 236, 257 (1993) .
2 Kaloyeros, A.E. and Fury, M.A., MRS Bulletin, 18, 22 (1993).
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4 Zama, H., Miyake, T., Hattori, T., and Oda, S., Jpn. J. Appl. Phys. 31, L588 (1992) .

Comparison of Growth and Microstructure of Copper Films Deposited From Different Cu(Ii) Precursors

  • J. Goswami (a1), S.A. Shivashankar (a1), Lakshmi Raghunathan (a1), Anjana Devi (a1) and K.V. Ramanathan (a1)...

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