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Comparison of Film Quality and Step Coverage for Silicon Dioxide Dielectrics Formed by RTCVD Using Tetraethoxysilane and Silane

  • D. S. Miles (a1), G. S. Harris (a2), D. Venables (a2), M. R. Mirabedini (a1), J. J. Wortman (a1), D. M. Maher (a2) and J. R. Hauser (a1)...

Abstract

Rapid thermal chemical vapor deposition (RTCVD) oxides formed using TEOS and oxygen (O2) are compared with RTCVD oxides formed using silane (SiH4) and nitrous oxide (N2O). These oxides were deposited under varying pressure and gas composition to investigate the film step coverage and electrical properties. Cross-sectional scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used in determining the oxide step coverage. Excellent oxide conformality, greater than 90 %, was achieved with SiH4 and N2O over a wide range of aspect ratios. The average breakdown field obtained for the SiH4/N2O oxides is approximately 13 MV/cm, which is greater than values measured for oxides formed by conventional dry thermal process. Oxides deposited using TEOS typically have an average breakdown field of about 8 MV/cm. We conclude that the SiH4/N2O oxide process for the deposition of SiO2 films in a RTCVD reactor is a very promising candidate for sidewall spacer formation in advanced device applications.

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