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Comparison Of F2 Plasma Chemistries For Deep Etching Of SiC

  • K. P. Lee (a1), P. Leerungnawarat (a1) (a2), S. J. Pearton (a1), F. Ren (a3), S. N. G. Chu (a4) and C.-M. Zetterling (a5)...


A number of F2-based plasma chemistries (NF3, SF6, PF5 and BF3) were investigated for high rate etching of SiC. The most advantageous of these is SF6, based on the high rate (0.6 μm · min−1) it achieves and its relatively low cost compared to NF3. The changes in electrical properties of the near-surface region are relatively minor when the incident ion energy is kept below approximately 75 eV. At a process pressure of 5 mTorr, the SiC etch rate falls-off by ∼15 % in 30 μm diameter via holes compared to larger diameter holes (> 60 μm diameter) or open areas on the mask.



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1. Properties of SiC, ed. G.L., Harris (Inspec, London, UK 1995), pp. 131149.
2. SiC: A Review of Fundamental Questions and Applications to Current Device Technology, ed. W.J., Choyke, H., Matsunami and G., Pensl (Springer-Verlag, Berlin 1997).
3. See, for example, Shul, R.J., Willison, C.G., Sullivan, C.T., Kravitz, S.H., Zhang, L., and Zipperian, T.E., Proc. Electrochem. Soc. 98–2 564 (1998)
4. Lanois, F., Planson, D., Locatelli, M.L., Lassagne, P., Jaussaud, C. and Chante, J.P., J. Electron. Mater. 28 219 (1999).
5. Yih, P.H. and Steckl, A.J., J. Electrochem. Soc. 140 1813 (1993).
6. Luther, B.P., Ruzyllo, J. and Miller, D.L., Appl. Phys. Lett. 63 171 (1990).
7. Wu, J., Parsons, J.D. and Evans, D.R., J. Electrochem. Soc. 142 669 (1995).
8. Lanois, F., Lassagne, P., Planson, D. and Locatelli, M.L., Appl. Phys. Lett. 69 236 (1996).
9. Donmae, S., Shibahara, K., Nishino, S. and Matsunami, H., Jap. J. Appl. Phys. 24 L873 (1985).
10. Kelner, G., Binari, S.C. and Klein, P.H., J. Electrochem. Soc. 134 253 (1987).
11. Casady, J., Luckowski, E.D., Bozack, M., Sheridan, B., Johnson, R.W. and Williams, J.R., J. Electrochem. Soc. 143 1750 (1996).
12. Palmer, J.W., Davis, R.F., Wallett, T.M. and Bhasin, K.B., J. Vac. Sci. Technol. A4 590 (1986).
13. Steckl, A.J. and Yih, P.H., Appl. Phys. Lett. 60 1966 (1992).
14. Flemish, J.R., Xie, K. and Zhao, J., Appl. Phys. Lett. 64 2315 (1994).
15. Cao, L., Li, B. and Zhao, J.H., Proceeding of the International Conference on SiC and IIINitrides, 1998 (IOP, Bristol, UK, 1998), pp. 97, 833.
16. Flemish, J.R. and Xie, K., J. Electrochem. Soc. 143 2620 (1996).
17. Wang, J.J., Lambers, E.S., Pearton, S.J., Östling, M., Zetterling, C.-M., Grow, J.M. and Ren, F., Solid-State Electron. 42 743 (1998).
18. McDaniel, G.F., Lee, J.W., Lambers, E.S., Pearton, S.J., Holloway, P.H., Ren, F., Grow, J.M., Bhaskaran, M. and Wilson, R.C., J. Vac. Sci. Technol. A14 885 (1997).
19. Wang, J.J., Lambers, E.S., Pearton, S.J., Ostling, M., Zetterling, C.-M., Grow, J.M., Ren, F. and Shul, R.J., J. Vac. Sci, Technol. A16 2204 (1998).
20. Hong, J., Shul, R.J., Zhang, L., Lester, L.F., Cho, H., Hahn, Y.B., Hays, D.C., Jung, K.B., Pearton, S.J., Zetterling, C.-M. and Ostling, M., J. Electron. Mater. 28 196 (1999).
21. Xie, K., Flemish, J.R., Zhao, J.H., Buchwald, W.R. and Casas, L., Appl. Phys. Lett. 67 368 (1995).
22. Leerungnawarat, P., Hays, D.C., Cho, H. Pearton, S.J., Strong, R.M., Zetterling, C.-M. and Östling, M., J. Vac. Sci. Technol. B17 2050 (1999).
23. Khan, F.A. and Adesida, I., Appl. Phys. Lett. 75 2268 (1999).
24. Cho, H., Leerungnawarat, P., Hays, D.C., Pearton, S.J., Chu, S.N.G., String, R.M., Zetterling, C.-M., Ostling, M. and Ren, F., Appl. Phys. Lett. 76 739 (2000).
25. Chabert, P., Proust, N., Perrin, J. and Boswell, R.W., Appl. Phys. Lett. 76 2310 (2000).
26. Yih, P.H. and Steckl, A.J., J. Electrochem. Soc. 142 312 (1996).
27. Muetterties, E.L., The Chemistry of Boron and its Compounds (Wiley, New York, 1967).
28. Cornbridge, D.E.C., Phosphorous: An Outline of its Chemistry, Biochemistry and Technology (Elsevier, New York, 1978).
29. Emelius, H.J., The Chemistry of Fluorine and its Compounds (Academic, New York, 1969).
30. Stacey, M., Tatlow, J.C., and Sharpe, A.G., Advances in Fluorine Chemistry (Butterworths, Washington, DC, 1961), Vol.3.


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