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Comparison Of F2 Plasma Chemistries For Deep Etching Of SiC

  • K. P. Lee (a1), P. Leerungnawarat (a1) (a2), S. J. Pearton (a1), F. Ren (a3), S. N. G. Chu (a4) and C.-M. Zetterling (a5)...

Abstract

A number of F2-based plasma chemistries (NF3, SF6, PF5 and BF3) were investigated for high rate etching of SiC. The most advantageous of these is SF6, based on the high rate (0.6 μm · min−1) it achieves and its relatively low cost compared to NF3. The changes in electrical properties of the near-surface region are relatively minor when the incident ion energy is kept below approximately 75 eV. At a process pressure of 5 mTorr, the SiC etch rate falls-off by ∼15 % in 30 μm diameter via holes compared to larger diameter holes (> 60 μm diameter) or open areas on the mask.

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