Skip to main content Accessibility help
×
Home

Comparison of Electromigration Induced Resistance Changes in Multilayer Al-Si/Ti and Al-Si/Ta Interconnects

  • M. Finetti (a1), I. Suni (a2), G. Desanti (a3), L. Bacci (a3) and C. Caprile (a3)...

Abstract

We have applied a temperature-ramp resistance analysis to investigate electromigration effects in unpassivated Al-Si/Ta multilayer structures. The results are compared to the behaviour previously observed in Al-Si/Ti interconnects. For comparison, single layer Al-Si metallizations were also studied.

Copyright

References

Hide All
1. Howard, J.K., White, J.F. and Ho, P.S., J.Appl.Phys. 49, p4083 (1978)
2. Iyer, S.S. and Ting, C.Y., Proc. 22nd Int.Symp. on Reliability Physics, IEEE Electron Devices and Reliability Society, Las Vegas, Ne, 1984, p.273.
3. Towner, J.M., Solid State Technol. 27, 197 (1984)
4. Hong, C.C. and Crook, D.L., Proc. 23rd Int.Symp. on Reliability Physics, IEEE Electron Devices and Reliability Society, Orlando, Fl, 1985, p.108.
5. Pasco, R.W. and Schwartz, J.A., Solid-State Electron. 26, 445 (1983)
6. Finetti, M., Ronkainen, H., Blomberg, M. and Suni, I., to be published in the Proc. of the Materials Research Society Fall Meeting, Boston, 1985.
7. Schwartz, J.A. and Felton, L.E., Solid-Sate Electron. 28, 669 (1985)
8. Schreiber, H.U., Solid-State Electron. 28, 1153 (1985)

Comparison of Electromigration Induced Resistance Changes in Multilayer Al-Si/Ti and Al-Si/Ta Interconnects

  • M. Finetti (a1), I. Suni (a2), G. Desanti (a3), L. Bacci (a3) and C. Caprile (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.