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A Comparison of Different Techniques for the Rapid Thermal Annealing of Ion Implants in Silicon

Published online by Cambridge University Press:  26 February 2011

D. J. Wouters ,
J. Vanhellemont ,
D. Avau  and
H. E. Maes
D. J. Wouters
Affiliation:
Interuniversitair Micro-Electronica Centrum vzw, Kapeldreef 75, B-3030 Heverlee, Belgium
J. Vanhellemont
Affiliation:
Interuniversitair Micro-Electronica Centrum vzw, Kapeldreef 75, B-3030 Heverlee, Belgium
D. Avau
Affiliation:
Interuniversitair Micro-Electronica Centrum vzw, Kapeldreef 75, B-3030 Heverlee, Belgium
H. E. Maes
Affiliation:
Interuniversitair Micro-Electronica Centrum vzw, Kapeldreef 75, B-3030 Heverlee, Belgium
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Abstract

In this paper, a comparative study is presented of different techniques used for the annealing of arsenic ion implants in silicon. The used techniques are: lamp annealing using a bank of tungsten-halogen lamps, CW laser annealing and conventional furnace annealing. The annealing quality of the implanted layers is evaluated in terms of dopant activation, dopant diffusion and final extended defect states. The furnace annealing combines a good electrical dopant activation with nearly complete annihilation of the a/c dislocation loops, but substantial diffusion of the dopant profile is measured. Laser annealing gives good electrical activation with very low diffusion, but fails in removing end-of-range extended defects. Furthermore, latent electrical active defects of a donor-type are created. The tungsten halogen lamp annealing gives comparable activation and the diffusion is still lower than can be resolved by SIMS measurements, while growth and annihilation of the a/c dislocation loops is present but not yet completed. These experiments are in agreement with theoretical comparison of the different annealing techniques based on the effective (T,t) coordinates of each technique, which favours RTA processes in the high temperature - “seconds” -time range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 731
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1] Maher, D.M., Knoell, R.V., Ellington, M.B. and Jacobson, D.C. in Rapid Thermal Processing, edited by Sedgwick, T.O., Seidel, T.E., and Tsaur, B.-Y. (Mat.Res.Soc.Proc. 52, Pittsburgh, PA 1986) pp. 93–105.Google Scholar
[2] Sadana, D.K., in Rapid Thermal Processing of Electronic Materials, edited by Wilson, S.R., Powell, R., Davies, D.E. (Mater.Res.Soc.Proc. 92, Pittsburgh, PA 1987) pp. 319–328.Google Scholar
[3] Wouters, D., Maes, H.E. in Energy-Beans Solid Interactions/1984, edited by Biegelsen, D.K., Rozgonyi, G. and Shank, C. (Mat.Res.Soc.Proc. 35, Pittsburgh, PA 1985) p.359.Google Scholar
[4] Fehribach, J.D.,Ghez, R., and Oehrlein, G.S., Appl.Phys.Lett. 46 (4), 433–435 (1985).Google Scholar
[5] Lietoila, A., Gold, R.B.,Gibbons, J.F. and Christel, L.A. in CW Beam Processing of Silicon and Other Semiconductors, edited by Gibbons, J.F. (Semiconductors and Semimetals 17, Academic Press, Orlando, 1984)p.71.Google Scholar
[6] Hill, C. in Laser-Solid Interactions and Transient Thermal Processing, edited by Narayan, J., Brown, W.L. and Lemons, R.A. (Mat.Res.Soc.Proc. 13, North-Holland, New York 1983) pp. 382–392.Google Scholar
[7] Seidel, T.E., Pai, C.S.,Lischner, D.J., Maher, D.M.,Knoell, R.V., Williams, J.S., Penumalli, B.R. and Jacobson, D.C. in Energy-Beam Solid Interactions/1984 edited by Biegelsen, D.K., Rosgonyi, G. and Shank, C. in (Mat.Res.Soc.Proc. 35, Pittsburgh, PA 1985) pp.329–340.Google Scholar
[8] Lietoila, A., and Gibbons, J.F. in CW Beamc Processing of Silicon and Other Semiconductors, edited by Gibbons, J.F. (Semiconductors and Semimetals 17, Academic Press, Orlando,1984) p.107.Google Scholar
[9] Csepregi, L., Mayer, J.W., and Sigmon, T.W., Phys.Lett. 54A, 157 (1975).Google Scholar