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Comparison of Current and Light Induced Defects in a-Si:H
Published online by Cambridge University Press: 01 January 1993
Abstract
Metastable defect creation by illumination and by a forward current in p-i-n devices are compared using CPM and reverse current measurements of the defect density. The data show that the same defects are formed by the two mechanisms, but with different spatial profiles. Numerical modelling shows how the spatial profile influences the reverse bias current.
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- Research Article
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- Copyright © Materials Research Society 1993
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