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Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O2, N2O, H2O, O2 plasma, or N2O plasma, and Hf (IV) t-butoxide

Published online by Cambridge University Press:  28 July 2011

Harish B. Bhandari ,
Ping Chen  and
Tonya M. Klein
Harish B. Bhandari
Affiliation:
Department of Chemical Engineering, The University of Alabama, Tuscaloosa, AL 35487, USA
Ping Chen
Affiliation:
Department of Chemical Engineering, The University of Alabama, Tuscaloosa, AL 35487, USA
Tonya M. Klein
Affiliation:
Department of Chemical Engineering, The University of Alabama, Tuscaloosa, AL 35487, USA
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Abstract

Hafnium oxide (HfO2) and silicon containing hafnium oxide (HfSixOy) thin films were deposited by thermal and plasma enhanced chemical vapor deposition (PECVD) using Hf (IV) t-butoxide and either O2, N2O, H2O, O2 plasma or N2O plasma as an oxygen source. Silane, 2% in He, was added to the reactant gas mixture to incorporate Si. Deposition rate and composition dependence on substrate temperature was studied and the deposited films were annealed in air for 30 min at 1100°C to observe changes in crystallinity and composition. Silicon incorporation was higher for H2O deposited HfSixOy films (5 at.%) than O2 and N2O deposited films (2 at.%) and had a lower deposition rate. Arrhenius plots reveal a non-simplistic reaction scheme since higher temperatures result in lower deposition rates due to precursor desorption. XRD indicate that as-deposited films using H2O are amorphous while O2 and N2O deposited films are microcrystalline with a monoclinic phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D7.8
Copyright
Copyright © Materials Research Society 2004

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References

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