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Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

  • J. Chan (a1), T. Fu (a1), N. W. Cheung (a1), J. Ross (a2), N. Newman (a2) and M. Rubin (a2)...

Abstract

Crystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

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Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

  • J. Chan (a1), T. Fu (a1), N. W. Cheung (a1), J. Ross (a2), N. Newman (a2) and M. Rubin (a2)...

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