Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-21T04:11:48.511Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison between Air and UV/Ozone Surfaces Passivation Methods of GaAs (100) Substrates

Published online by Cambridge University Press:  25 February 2011

G.M. Ingo ,
G. Padeletti ,
G. Mattogno  and
A. Scandurra
G.M. Ingo
Affiliation:
CNR - ITSE, CP 10, 00016 Monterotondo Stazione Roma, (Italy) Consorzio Catania Ricerche, Dipartimento di Chimica della, Universitä di Catania, via A. Doria 6, 95125 Catania, (Italy)
G. Padeletti
Affiliation:
CNR - ITSE, CP 10, 00016 Monterotondo Stazione Roma, (Italy)
G. Mattogno
Affiliation:
CNR - ITSE, CP 10, 00016 Monterotondo Stazione Roma, (Italy)
A. Scandurra
Affiliation:
Consorzio Catania Ricerche, Dipartimento di Chimica della, Universitä di Catania, via A. Doria 6, 95125 Catania, (Italy)
Get access

Abstract

Air and UV/ozone exposure have been used for growing sacrificial thin oxide layers on HCl etched GaAs (100) surfaces. Passive films have been then desorbed by vacuum thermal cleaning in order to prepare suitable surfaces for molecular beam epitaxy (MBE) growth. Structure, thickness and chemical composition of passive films and desorbed surfaces have been studied by ellipsometry and angle dependent X-ray photoelectron spectroscopy (ADXPS). The results have indicated an increased chemical reactivity of both arsenic and gallium during UV/ozone exposure, compared to that of air exposure, that produces Ga (III) oxide enriched films. Furthermore, XPS results have also shown that the thermal desorption behavior are different. In particular, GaAs (100) after short term UV/ozone exposure and oxide film desorption, has an As/Ga surface atomic ratio close to unity and a level of carbon contamination below the XPS detectability. On the contrary, air exposed surfaces never have a stoichiometric composition and carbon is not completely removed by a vacuum heating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 255
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Grunthaner, F.J., Vasquez, R.P. and Lewis, B.F., Appl.Phys.Lett. 42, 293 (1983).Google Scholar
2. Spicer, W.E., Chye, P.W., Su, C.Y., Lindau, I. and Skeath, P., J. Vac. Sci. Techn., 16, 1191 (1979).Google Scholar
3. Massies, J. and Contour, J.P., J.App.Phys., 58, 806 (1985).CrossRefGoogle Scholar
4. Wodall, J.M., Oelhafen, P., Jackson, T.N., Freeouf, J.L. and Pettit, G.D., J. Vac. Sci.Technol. B, 3 795 (1983).Google Scholar
5. Vig, J.. J. Vac. Sci. Techn. A, 3, 1027 (1985).Google Scholar
6. Ingrey, S., Springthorpe, A.J., Appl.Phys.Lett. 50, 77 (1987).Google Scholar
7. Ingrey, S., Lau, W. and McIntyre, N.S., J.Vac.Sci.Tec.A 4, 984 (1986)Google Scholar
8. Landgren, G., Ludeke, R., Yugnet, Y., Morar, F.J. and Himpsel, F.J., J. Vac. Sci. Techn., 17, 1045 (1980).Google Scholar
9. Lukovsky, G., J.Vac.Sci.Techn. 19 456 (1981) and ref.therein.CrossRefGoogle Scholar
10. Powell, C.J., Tanuma, S. and Penn, D., Surf.Interf.Anal., 11, 577 (1988)Google Scholar
11. Seah, M.P. and Dench, W.A., Surf.and Interf.Anal., 1, 1 (1979).Google Scholar
12. Adams, A.C. and Pruniax, B.R., J.Electrochem.Soc. 120 408 (1973).Google Scholar