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Comparative Thickness Measurements of Heterojunction Layers by Ellipsometric, RBS, and XTEM Analysis +

  • J. A. Woollam (a1), P. G. Snyder (a1), A. W. McCOrmick (a2), A. K. Rai (a2), D. C. Ingram (a2), P. P. Pronko (a2) and J. J. Geddes (a3)...

Abstract

Variable Angle of incidence Spectroscopie Ellipsometry (VASE), Rutherford Backscattering (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM), are used to measure heterojunction layer thicknesses in an AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits.

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Supported by NASA Lewis Grant NAG-3–154, and the Naval Air Systems Command.

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1. Erman, M., Theeten, J.B., Vodjdani, N., and Demay, Y., J. Vac. Sci. Techno. B1, 328 (1983).
2. Snyder, P.G., Rost, M.C., Bu-Abbud, G.H., Woollam, J.A., and Alterovitz, S.A., J. Appl. Phys. 60, 3292 (1986).
3. MRS Proceedings Vol. 62, “Materials Problem Solving with Transmission Electron Microscopy”, Hobbs, L.W., Westmacott, K.H., and Williams, D.B., Editors, Materials Research Society, 1985.
4. Chu, W.K., Mayer, J.W., and Nicolet, M.A., Backscattering Spectrometry, Academic Press, 1978.
5. Aspnes, D.E. and Studna, A., Appl. Optics 1O, 1024 (1971).
6. Aspnes, D.E., J. Vac. Sci. Technol. 18, 289 (1981).
7. Aspnes, D.E., Kelso, S.M., Logan, R.A., and Bhat, R., J. Appl. Phys. 60, 754 (1986).
8. Bu-Abbud, G.H., Bashara, N.M., and Woollam, J.A., Thin Solid Films 138, 27 (1986).
9. Snyder, P.G., Oh, J.E., and Woollam, O.A., “Ellipsometric Analysis of Intrinsic Electric Fields in Semiconductor Heterostructures”, submitted.

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