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Comparative Thickness Measurements of Heterojunction Layers by Ellipsometric, RBS, and XTEM Analysis +

  • J. A. Woollam (a1), P. G. Snyder (a1), A. W. McCOrmick (a2), A. K. Rai (a2), D. C. Ingram (a2), P. P. Pronko (a2) and J. J. Geddes (a3)...


Variable Angle of incidence Spectroscopie Ellipsometry (VASE), Rutherford Backscattering (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM), are used to measure heterojunction layer thicknesses in an AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits.



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Supported by NASA Lewis Grant NAG-3–154, and the Naval Air Systems Command.



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