Hostname: page-component-7bb8b95d7b-dvmhs Total loading time: 0 Render date: 2024-09-22T09:54:10.599Z Has data issue: false hasContentIssue false
  • English
  • Français

A Comparative Study of Te- and Ge-Based OHMIC Contacts on GaAs

Published online by Cambridge University Press:  26 February 2011

K. Wuyts ,
A. Vantomme ,
R.E. Silverans ,
M. Van Hove  and
M. Van Rossj
K. Wuyts
Affiliation:
Physics Department, University of Leuven, B-3030 Leuven, Belgium
A. Vantomme
Affiliation:
Physics Department, University of Leuven, B-3030 Leuven, Belgium
R.E. Silverans
Affiliation:
Physics Department, University of Leuven, B-3030 Leuven, Belgium
M. Van Hove
Affiliation:
Imec, B-3030 Leuven, Belgium
M. Van Rossj
Affiliation:
Imec, B-3030 Leuven, Belgium
Get access

Abstract

The formation of furnace processed Te- and Ge-based ohmic contacts on n-GaAs was investigated using Rutherford Backscattering Spectroscopy and electrical measurements. Contact resistivities obtained with the Ni/Au/Te metallization were comparable to those of the standard Ni/AuGe scheme, the lowest value for both metallizations being 5.10−6Qcm2. The onset of ohmicity of the Au/Te scheme varied from 480°C to 550°C by changing the Au/Te thickness ratio. The diffusion characteristics of the contacting metals were studied on GaAs as well as on SiO2 substrates. Arguments in favor of the model explaining the nature of the contacts by the formation of a heterojunction-like structure are adduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 545
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Palmstrom, C.J. and Morgan, D.V., in Gallium Arsenide Materials, Devices and circuits, edited by Howes, M.J. and Morgan, D.V. (Willey, New York, 1985), p. 195.Google Scholar
2. Ghosh, C., Yenigalla, P., Atkins, K., IEEE Electr. Dev. Lett. 4, 301 (1983)Google Scholar
3. Massalski, T.B., Binary alloy phase diagrams, (American Society for metals, Metals Park, Ohio, 1986).Google Scholar
4. Doolittle, L.R., Nucl. Instrum. Meth. B9, 344 (1985).Google Scholar
5. Barlin, I. and Knacke, O., Thermochemical properties of inorganic substances, (Springer, Berlin, 1973).Google Scholar
6. Wittmer, M., Pretorius, R., Mayer, J.W. and Nicolet, M.A., Sol. Stat. Electron. 20, 433 (1977).CrossRefGoogle Scholar
7. Kirillov, D. and Chung, Y., Appl. Phys. Lett. 51 (11), 846 (1987).Google Scholar
8. Wuyts, K. et al., submitted to Hyp. Int.Google Scholar
9. Shih, Y.C., Murakami, M., Wilkie, E.L. and Callagari, A.C., J. Appl. Phys. 62 (2), 582 (1987)Google Scholar
10. Beyers, R., Kim, K.B. and Sinclair, R., J. Appl. Phys. 61 (6), 2195 (1987).CrossRefGoogle Scholar
11. Weber, Z.L., Gronsky, R., Washburn, J., Newman, N., Spicer, W.E. and Weber, E.R., J. Vac. Sci. Technol. B4 (4), 912 (1986).CrossRefGoogle Scholar