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A Comparative Study of Hydrogenated Amorphous Silicon Films Prepared by RF Sputtering in He/H2, Ar/H2 and Xe/H2 Mixtures

  • Mark L. Albers (a1), H. R. Shanks (a1) and J. Shinar (a1)

Abstract

Preliminary results of a comparative study of some optical and ESR properties of aSi:H films prepared by rf sputtering on a cold substrate in 10 mtorr of either He, Ar, or Xe and 0.5 mtorr H2 are presented. In all cases the concentration of Si-H and Si-H2 bonds, the optical gap and the dangling bond spin density all generally increase as the rf power is decreased from 3.3 to 0.27 W/cm2. However, whereas the optical energy gap of He/H2 sputtered films ranges from 1.26 eV to 2.13 eV, the gap of Ar/H2 and Xe/H2 films sputtered under these conditions only changes from 1.54 to 1.94 and 1.41 to 1.71 eV, respectively. The dangling bond spin densities are lowest (~1017 cm-3) in the Ar/H2 sputtered films at high rf power and highest (~5x1018 cm-3) in Xe/H2 sputtered films at low power.

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References

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1. Thompson, I. M. J., in The Physics of Hydrogenated Amorphous Silicon, edited by Joannopoulos, J. D. and Lucovsky, G.(Springer-Verlag, New York, 1984), Vol.1.
2. Ross, R. C. and Messier, R., J. Appl. Phys. 54, 5744 (1983).
3. Street, R. A. and Biegelsen, D. K., in The Physics of Hydrogenated Amorphous Silicon, edited by Joannopoulos, J. D. and Lucovsky, G. (Springer-Verlag, New York, 1984), Vol.2.
4. Albers, M. L., Shanks, H. R., and Shinar, J., Proc. Third. Int. Symp. Optical and Optoelectronic Appl. Sci. and Eng., Innsbruck, Austria, 1986; the spin densities cited in this work are incorrect and have been revised in the present work.
5. Tauc, J., Grigorivici, R., and Vancu, A., in Amorphous and Liquid Semiconductors, edited by Tauc, J. (Plenum Press, 1974).
6. Ley, L., in The Physics of Hydrogenated Amorphous Silicon, edited by Joannopoulos, J. D. and Lucovsky, G.(Springer-Verlag, New York, 1986), Vol.2.
7. Cardona, M., Phys. Stat. Sol.(b) 118, 463 (1983).
8. Shanks, H. R., Jeffrey, F. R., and Lowry, M. E., J. Phys. (Paris) 42, C4773 (1981).
9. Anderson, H. H. and Bay, H. L., in Sputtering by Particle Bombardment I, edited by Behrisch, R.(Springer-Verlag, 1981).
10. Ross, R. C. and Messier, R., J. Appl. Phys. 52, 5329 (1981).

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