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Comparative Study Of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations

Published online by Cambridge University Press:  10 February 2011

P. Vennegues ,
S. Haffouz ,
A. Bouille ,
M. Leroux  and
B. Beaumont
P. Vennegues
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France, pv@cnrs.cnrs.fr
S. Haffouz
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France.
A. Bouille
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France.
M. Leroux
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France.
B. Beaumont
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France.
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Abstract

The growth modes and resulting microstructures of GaN films grown by Metalorganic Vapor Phase Epitaxy (MOVPE) on (0001) sapphire with either a simple nitridation of the surface and N2 as carrier gas or with a treatment of the nitridated surface under silane and ammonia with a mixture of H2 and N2 as carrier gas have been investigated. The second process results in a three dimensional first stage of the growth before a coalescence of the islands and the smoothing of the surface. Using this growth process, the defects density can be decreased down to 3.108 cm−2. This reduction in defect density has a drastic effect on photoluminescence properties of the material, and the luminescence efficiency can be increased by a factor of 20. It is also observed that the strain of this material is much higher as compared with material grown with the first process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 273
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Keller, S., Kemmer, B. P., Wu, Y. F., Heyring, B., Kapolnek, D., Speck, J. S., Mishra, U. K. and DenBaars, S. P., Appl. Phys. Lett. 68, 1525 (1996).Google Scholar
[2] Uchida, K., Watanabe, A., Yano, F., Kouguchi, M., Tanaka, T. and Minagawa, S., J. Appl. Phys. 79, 3487 (1996).Google Scholar
[3] Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
[4] Quian, W., Skowronski, M., Doverspike, K., Rowland, L. B., Gaskill, D. K., J. Cryst. Growth. 151, 396 (1995).Google Scholar
[5] Vennéguès, P., Beaumont, B., Vaille, M. and Gibart, P., Appl. Phys. Lett. 70, 2434 (1997)Google Scholar
[6] Quian, W., Skowronski, M., Graef, M De, Doverspike, K., Rowland, L. B., Gaskill, D. K., Appl. Phys. Lett. 66, 1252 (1995).Google Scholar
[7] Vennéguès, P., Beaumont, B., Vaille, M. and Gibart, P., J. Cryst. Growth. 173, 249 (1997).Google Scholar
[8] Kapolnek, D., Wu, X. H., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P. and Speck, J. S., Appl. Phys. Lett. 67, 1541 (1995).Google Scholar
[9] Vennéguè, P., Beaumont, B., Haffouz, S., Vaille, M. and Gibart, P., J. Cryst. Growth., 187, 167 (1998).Google Scholar
[10] Ng, H. M., Poppalapudi, D., Korakakis, D., Singh, R. and Moustakas, T. D., Proc. 2nd Int. Conf Nitride Semiconductors (Tokushima, Japan, Oct. 1997) M1–3.Google Scholar
[11] Rosner, S. J., Carr, E. C., Ludowise, M. J., Girolami, G. and Erikson, H. I., Appl. Phys. Lett. 70, 420 (1997).Google Scholar
[12] Gil, B., Briot, O. and Aulombart, R. L., Phys. Rev. B 52., R17028 (1995).Google Scholar
[13] Eaglesham, D. J., Unterwald, F. C. and Jacobson, D. C., Phys. Rev. Lett. 70, 966 (1993).Google Scholar