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The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples

Published online by Cambridge University Press:  10 February 2011

A. O. Evwaraye ,
S. R. Smith  and
W. C. Mitchel
A. O. Evwaraye
Affiliation:
Materials Directorate, MLPO, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio, 45422–7077. U.S. A
S. R. Smith
Affiliation:
University of Dayton, Physics Department, 300 College Park, Dayton, Ohio 45469–2314
W. C. Mitchel
Affiliation:
University of Dayton Research Institute, 300 College Park. Dayton, Ohio 45469–0167
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Abstract

Thermal admittance spectroscopy was used to characterize the shallow dopants in chemical vapor deposition ( CVD) grown thin films and in sublimation sandwich method ( SSM) grown 4H-SiC layers. The values of the activation energy levels of EC − 0.054 eV for Nitrogen at the hexagonal site and of EC − 0.10 eV for Nitrogen at the cubic site were indices of comparison. The net carrier concentrations ( ND − NV ) of the films were determined by capacitance-voltage measurements. The net carrier concentrations for the SSM films ranged from 2 × 1017 to 7 × 1017 cm−3. The two Nitrogen levels were observed in the CVD films. Hopping conduction with an activation energy of EC −0.0058 eV was observed in one SSM sample having ND − NV = 7 × 1017 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 237
Copyright
Copyright © Materials Research Society 1999

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References

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