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Comparative SEM and Cathodoluminescence Microanalysis of Porous GaP Structures

  • M.A. Stevens-Kalceff (a1), S. Langa (a2), I.M. Tiginyanu (a2), J. Carstensen (a3), M. Christophersen (a3) and H. Föll (a3)...

Abstract

Electron microscopy and cathodoluminescence (CL) microanalysis were used for a comparative study of porous layers fabricated by electrochemical etching of n-GaP substrates in a sulfuric acid solution. Both the CL and morphology of porous layers were found to depend upon the anodic current density. At high current density (100 mA/cm2) anodization leads to the formation of so-called current-line oriented pores and an increase in the CL intensity. We observed self-induced voltage oscillations giving rise to a synchronous modulation of the diameter of pores and CL intensity. When the current density decreased to values as low as 1 mA/cm2 the pores began to grow along <111> crystallographic directions and the CL intensity was observed to be lower than that of bulk GaP.

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Comparative SEM and Cathodoluminescence Microanalysis of Porous GaP Structures

  • M.A. Stevens-Kalceff (a1), S. Langa (a2), I.M. Tiginyanu (a2), J. Carstensen (a3), M. Christophersen (a3) and H. Föll (a3)...

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