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Comparative Raman and Transmission Electron Microscopy Analysis of the Evolution of Platelet Defects in Plasma Hydrogenated and Annealed Czochralski Silicon

  • R. Job (a1), M.-F. Beaufort (a2), J.-F. Barbot (a2), A. G. Ulyashin (a1) and W. R. Fahrner (a1)...

Abstract

Standard p- and n-type Czochralski (Cz) silicon wafers were hydrogenated by a RF (13.56 MHz) hydrogen plasma at moderate temperatures (250 °C). After plasma hydrogenation and subsequent annealing up to 600 °C the formation and of H2 molecules in voids and platelets was investigated by Raman spectroscopy. The Raman intensities of the H2 vibration modes at ∼ 4150 cm-1 exhibited significant intensity modulations in dependence on the annealing temperature. The intensities of the H2 Raman lines indirectly monitor the evolution of the voids and platelets upon annealing. This assumption was verified by cross-sectional transmission electron microscopy (XTEM), which was applied for comparison. The intensity modulations of the H2 Raman signal can be explained by the evolution of the well known {111} and {001} platelets. At lower annealing temperatures (< 500 °C) platelets laying in {111} planes are dominant, while at elevated temperatures (> 500 °C) [001]-oriented platelets become more and more important. In addition in p-type material by XTEM also {110} platelets could be observed.

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Comparative Raman and Transmission Electron Microscopy Analysis of the Evolution of Platelet Defects in Plasma Hydrogenated and Annealed Czochralski Silicon

  • R. Job (a1), M.-F. Beaufort (a2), J.-F. Barbot (a2), A. G. Ulyashin (a1) and W. R. Fahrner (a1)...

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