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Comparative Investigation of Photoluminescence of In- and Si- doped GaN/AlGaN Multi-Quantum Wells

Published online by Cambridge University Press:  01 February 2011

W. H. Sun ,
L. S. Wang  and
S. J. Chua
W. H. Sun
Affiliation:
Opto- & Electronic Systems Cluster, Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore
L. S. Wang
Affiliation:
Opto- & Electronic Systems Cluster, Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore
S. J. Chua
Affiliation:
Opto- & Electronic Systems Cluster, Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore Department of Electrical and Computer Engineering, National University of Singapore, 10, Kent Ridge Crescent, 119260, Singapore
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Abstract

The GaN/AlGaN multi-quantum-wells (MQWs) have been grown via metalorganic chemical vapor deposition (MOCVD). Micro-Photoluminescence (PL) measurement has been performed on non-, In- and Si- doped GaN/AlGaN multi-quantum-well samples in the temperature ranges of 90-300 K. In the non-doped GaN/AlGaN multi-quantum-wells we observed the free exciton peak at 3.4587 eV at 90 K. Other exciton related peaks are located at 3.4346, 3.4177, 3.394, 3.3129eV, which are probably associated with the strongly localized excitons involving the defects. In In-doped GaN/AlGaN MQWs, the free exciton peaks have a slight red-shift from 3.4712 to 3.4629 eV, but the PL intensities become stronger with increasing trimethylindium (TMIn) flow from 10.6 to 42.6-νmol/min. With Si-doping in the well layers, photoluminescence exhibits an envelope of exciton bands ranged from 3.4796eV (free exciton) to 3.43915eV. The excitonic peaks in the bands vary in intensity and position with sample temperature. In addition, we have also observed the LO phonon replica of AlGaN interacted by the laser line due to the resonance effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.26
Copyright
Copyright © Materials Research Society 2002

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