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Comparative Growth Kinetics Of Sige In A Commercial Reduced Pressure Chemical Vapour Deposition Epi Reactor And Anomalies During Growth of Thin Si Layers on Sige

Published online by Cambridge University Press:  10 February 2011

Matity Caymax ,
Roger Loo ,
Bert Brijs ,
Wilfried Vandervorst ,
David J Howard ,
Kenji Kimura  and
Kaoru Nakajima
Matity Caymax
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, caymax@imec.be
Roger Loo
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, caymax@imec.be
Bert Brijs
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, caymax@imec.be
Wilfried Vandervorst
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, caymax@imec.be
David J Howard
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, caymax@imec.be
Kenji Kimura
Affiliation:
Dept. of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
Kaoru Nakajima
Affiliation:
Dept. of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
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Abstract

A short discussion about growth kinetics of Si and Si1-xGex, epitaxial layers in a reduced pressure CVD reactor using both dichlorosilane and silane is presented. Through careful observations of the growth of very thin Si layers on SiGe, an anomaly in the Si growth ratewas detected such that the thinner the Si layer, the higher the Si growth rate on SiGe. Due to the difficult nature of very thin film characterization, several analysis techniques were used. A possible explanation based on TEM observations is put forward.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 339
Copyright
Copyright © Materials Research Society 1998

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References

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