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Comparative Electrical Study of Epitaxial and Polycrystalline GdSi2/(100)p-Si Schottky Barriers

  • B. Kovács (a1), Zs. J. Horváth (a1), I. Mojzes (a1) (a2), G. Molnár (a3), G. Petó (a3) and M. Andrási (a3)...

Abstract

The electrical and interface parameters of epitaxial orthorombic, textured orthorombic, polycrystalline orthorombic, and polycrystalline hexagonal structures with different initial thickness of the evaporated Gd layer are compared. The Schottky barrier height, the ideality factor, the series resistance, the breakdown voltage, the relative interfacial layer thickness, the energy distribution spectra of interface states, and the equilibrium interface charge have been evaluated from the current-voltage and capacitance-voltage measurements. The obtained results indicate that the initial thickness of the Gd layer influences much more stronger the obtained parameters through the perfection of the epitaxial layer than the crystal structure.

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Comparative Electrical Study of Epitaxial and Polycrystalline GdSi2/(100)p-Si Schottky Barriers

  • B. Kovács (a1), Zs. J. Horváth (a1), I. Mojzes (a1) (a2), G. Molnár (a3), G. Petó (a3) and M. Andrási (a3)...

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