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Comparative Characteristics of GaAs Detectors and Silicon Pixel Detectors with Internal Amplification

  • Gennady I. Koltsov (a1), V. N. Murashev (a2), A. P. Chubenko (a3), R. A. Mukhamedshin (a4), G. I. Britvich (a5), A. V. Chernykh (a6) and S. V. Chernykh (a7)...

Abstract

Comparative analysis of GaAs semiconductor radiation detectors and silicon pixel ones with internal amplification elaborated for detection of nuclear radiation is carried out. Electrophysical and spectral characteristics are compared.

Both the detector types have high sensitivity to α, β and γ radiation and can be applied in space and accelerator experiments for energy determination of elementary particles as well as in astrophysics, transmission and reflecting electron microscopy, medicine, biology and so on.

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References

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1. Dalla Betta, G.F. et al., Nuclear Instruments and Methods in Physics Research, A458 (2001), p. 275280.
2. Koltsov, G. I., Murashev, V. N., Mukhamedshin, R. A. and Chubenko, A. P., Collected articles “IT in a science, the engineering and educationMSAIECS, 311 (2005)
3. Chmill, V. et al., Nucl. Instr. and Methods in Phys. Res., A438 (1999), p. 362367.
4. Ayzenshtat, G. I., Bakin, N. N., Budnitsky, D. L. et al., Nucl. Instr. and Methods in Phys. Res., A466 (2001), p. 2532.

Keywords

Comparative Characteristics of GaAs Detectors and Silicon Pixel Detectors with Internal Amplification

  • Gennady I. Koltsov (a1), V. N. Murashev (a2), A. P. Chubenko (a3), R. A. Mukhamedshin (a4), G. I. Britvich (a5), A. V. Chernykh (a6) and S. V. Chernykh (a7)...

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